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| AP9960M Advanced Power Electronics Corp. Low On-Resistance Fast Switching Speed Surface Mount Package D2 D1 D1 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G2 S2 40V 20m 7.8A ID SO-8 S1 G1 Description D1 D2 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 40 20 7.8 6.2 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200120031 AP9960M Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.032 Max. Units 20 32 3 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=7A VGS=4.5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=7A 25 14.7 7.1 6.8 11.5 6.3 28.2 12.6 1725 235 145 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=40V, VGS=0V VDS=32V ,VGS=0V VGS= 20V ID=7A VDS=20V VGS=4.5V VDS=20V ID=1A RG=3.3,VGS=10V RD=20 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 2.3 20 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=2.3A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on FR4 board, t<10 sec. AP9960M 36 T C =25 C o 10V 6.0V 5.0V 4.5V ID , Drain Current (A) 32 T C =150 o C 10V 6.0V 5.0V 4.5V 24 ID , Drain Current (A) 24 V GS =4.0V 16 V GS =4.0V 12 8 0 0 1 2 3 4 0 0 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 2 I D =7.0A T C =25 60 I D =7.0A V GS =10V 40 Normalized RDS(ON) 2 4 6 8 10 12 1.4 RDS(ON) (m ) 0.8 20 0 0.2 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP9960M 10 2.4 8 ID , Drain Current (A) 1.6 6 4 0.8 2 0 25 50 75 100 125 150 PD (W) 0 0 50 100 150 T c , Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 Normalized Thermal Response (R thja) 10 0.2 1ms 10ms 1 0.1 0.1 0.05 ID (A) 100ms 1s 0.1 0.02 0.01 PDM 0.01 Single Pulse t T 10s T C =25 o C Single Pulse Duty Factor = t/T Peak Tj = P DM x Rthja + Ta 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP9960M 12 f=1.0MHz 10000 I D =7.0A VGS , Gate to Source Voltage (V) 9 Ciss V DS =12V V DS =16V VDS =20V 1000 6 C (pF) Coss Crss 100 3 0 0 5 10 15 20 25 10 1 7 13 19 25 31 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3.5 3 10 2.5 VGS(th) (V) Tj=150 o C Tj=25 o C IS(A) 1 2 1.5 0.1 1 0.01 0 0.4 0.8 1.2 0.5 -50 0 50 100 150 V SD (V) T j , Junction Temperature ( C ) o Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP9960M VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5 x RATED V DS RG G + 10 v - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 4.5V D 0.5 x RATED V DS G S + QGS QGD VGS 1~ 3 mA IG I D Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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